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| MJD200 (NPN) MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications Designed for low voltage, low-power, high-gain audio amplifier applications. Features http://onsemi.com * Collector-Emitter Sustaining Voltage - * High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc * * * * * * * = 45 (Min) @ IC = 2 Adc = 10 (Min) @ IC = 5 Adc Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB Epoxy Meets UL 94 V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb-Free Packages are Available VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS, 12.5 WATTS 4 12 3 DPAK CASE 369C STYLE 1 MARKING DIAGRAM YWW J2x0G MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation (Note 1) @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range - Continuous - Peak Symbol VCB VCEO VEB IC IB PD PD 1.4 0.011 TJ, Tstg -65 to +150 W W/C C Max 40 25 8.0 5.0 10 1.0 12.5 0.1 Unit Vdc Vdc Vdc Adc Adc W W/C Y WW G = = x = Year Work Week = 1 or 0 Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. (c) Semiconductor Components Industries, LLC, 2006 1 August, 2006 - Rev. 8 Publication Order Number: MJD200/D MJD200 (NPN) MJD210 (PNP) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 2) Symbol RqJC RqJA Max 10 89.3 Unit C/W C/W 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II IIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 3), (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0, TJ = 125C) Emitter Cutoff Current (VBE = 8 Vdc, IC = 0) VCEO(sus) VCBO 25 - - - - Vdc 100 100 100 nAdc mAdc nAdc VEBO ON CHARACTERISTICS DC Current Gain (Note 3), (IC = 500 mAdc, VCE = 1 Vdc) (IC = 2 Adc, VCE = 1 Vdc) (IC = 5 Adc, VCE = 2 Vdc) hFE - 70 45 10 - - - - - - 180 - Collector-Emitter Saturation Voltage (Note 3) (IC = 500 mAdc, IB = 50 mAdc) (IC = 2 Adc, IB = 200 mAdc) (IC = 5 Adc, IB = 1 Adc) VCE(sat) Vdc 0.3 0.75 1.8 2.5 1.6 Base-Emitter Saturation Voltage (Note 3), (IC = 5 Adc, IB = 1 Adc) Base-Emitter On Voltage (Note 3), (IC = 2 Adc, VCE = 1 Vdc) VBE(sat) VBE(on) Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (Note 4) (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) fT 65 - - - MHz pF MJD200 MJD210 Cob 80 120 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%. 4. fT = hfe* ftest. ORDERING INFORMATION Device MJD200 MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G MJD210 MJD210G MJD210RL MJD210RLG MJD210T4 MJD210T4G Package Type DPAK DPAK (Pb-Free) DPAK DPAK (Pb-Free) DPAK DPAK (Pb-Free) DPAK DPAK (Pb-Free) DPAK DPAK (Pb-Free) DPAK DPAK (Pb-Free) 2500 / Tape & Reel 1800 / Tape & Reel 75 Units / Rail 2500 / Tape & Reel 1800 / Tape & Reel 75 Units / Rail Shipping For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MJD200 (NPN) MJD210 (PNP) TA 2.5 PD, POWER DISSIPATION (WATTS) TC 25 25 ms +11 V 1.5 15 TA (SURFACE MOUNT) TC 0.5 5 0 -9 V 1 10 tr, tf 10 ns DUTY CYCLE = 1% 51 -4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS 25 50 75 100 125 150 D1 MUST BE FAST RECOVERY TYPE, e.g.: FOR PNP TEST CIRCUIT, 1N5825 USED ABOVE IB 100 mA REVERSE ALL POLARITIES MSD6100 USED BELOW IB 100 mA D1 RB RC SCOPE VCC +30 V 2 20 0 0 T, TEMPERATURE (C) Figure 1. Power Derating Figure 2. Switching Time Test Circuit 1K 500 300 200 100 t, TIME (ns) t, TIME (ns) 50 30 20 10 5 3 2 td 10K 5K 3K 2K 1K 500 300 200 100 50 30 20 5 10 ts VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C tr VCC = 30 V IC/IB = 10 TJ = 25C MJD200 MJD210 MJD200 MJD210 tf 3 5 10 1 1 23 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (A) 10 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 IC, COLLECTOR CURRENT (A) Figure 3. Turn-On Time Figure 4. Turn-Off Time http://onsemi.com 3 MJD200 (NPN) MJD210 (PNP) NPN MJD200 400 TJ = 150C 25C hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 200 -55 C 100 80 60 40 VCE = 1 V VCE = 2 V 0.2 0.3 0.5 0.7 1 2 IC, COLLECTOR CURRENT (A) 3 5 200 400 TJ = 150C 25C 100 80 60 40 VCE = 1 V VCE = 2 V 0.2 0.3 0.5 0.7 1 2 IC, COLLECTOR CURRENT (A) 3 5 -55 C PNP MJD210 20 0.05 0.07 0.1 20 0.05 0.07 0.1 Figure 5. DC Current Gain 2 TJ = 25C 1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2 TJ = 25C 1.6 1.2 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1 V 0.4 VCE(sat) @ IC/IB = 10 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 IC, COLLECTOR CURRENT (A) 2 3 5 1.2 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1 V 0.4 VCE(sat) @ IC/IB = 10 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 IC, COLLECTOR CURRENT (A) 0.8 0.8 2 3 5 Figure 6. "On" Voltage +2.5 V, TEMPERATURE COEFFICIENTS (mV/C) +2 +1.5 +1 +0.5 0 -0.5 -1 -1.5 -2 -2.5 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 qVB for VBE -55 C to 25C 25C to 150C -55 C to 25C 2 3 5 qVC for VCE(sat) 25C to 150C *APPLIES FOR IC/IB hFE/3 V, TEMPERATURE COEFFICIENTS (mV/C) +2.5 +2 +1.5 +1 +0.5 0 -0.5 -1 -1.5 -2 -2.5 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 3 5 qVB for VBE 25C to 150C -55 C to 25C *qVC for VCE(sat) -55 C to 25C *APPLIES FOR IC/IB hFE/3 25C to 150C IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 7. Temperature Coefficients http://onsemi.com 4 MJD200 (NPN) MJD210 (PNP) 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.02 0.05 0.02 0.01 0 (SINGLE PULSE) D = 0.5 0.2 0.1 RqJC(t) = r(t) qJC RqJC = 10C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) P(pk) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) t1 t2 DUTY CYCLE, D = t1/t2 0.05 0.1 0.2 0.5 1 2 t, TIME (ms) 5 10 20 50 100 200 Figure 8. Thermal Response 10 IC, COLLECTOR CURRENT (AMP) 5 3 2 1 5 ms TJ = 150C 100 ms 500 ms dc BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 1 2 3 5 7 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (V) 30 1 ms 0.1 0.01 0.3 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 9 is based on T J(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150C. T J(pk) may be calculated from the data in Figure 8. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 9. Active Region Safe Operating Area 200 TJ = 25C C, CAPACITANCE (pF) 100 70 50 Cob 30 20 0.4 MJD200 (NPN) MJD210 (PNP) 0.6 1 2 4 6 10 VR, REVERSE VOLTAGE (V) 20 40 Cib Figure 10. Capacitance http://onsemi.com 5 MJD200 (NPN) MJD210 (PNP) PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- -T- B V R 4 SEATING PLANE C E A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) T DIM A B C D E F G H J K L R S U V Z M SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 MJD200/D |
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